Abstract
The zero-bias resistance area (R0A) product is a primary figure-of-merit of infrared detector. The contributions of different dark current to R0A have been analyzed based on a long wavelength infrared type-II InAs/GaSb superlattice p-i-n photodiode. A dark current of 2.052 × 10−4 A cm−2 and a differential resistance-area of 32.314 Ω cm2 at zero bias voltage are achieved with a 100 % cutoff of 12.5 μm at 77 K. The temperature-dependence and bias-dependence of the dark currents are studied experimentally and correlated to the theory. At 77 K, by modeling the different reduced carrier concentration, the dominant mechanism of R0A can be varied from generation-recombination to tunneling.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
