Abstract
The crystal growth of InSb thin films on mica substrates was investigated by conventional three temperature vacuum evaporation with varied Sb/In flux ratios and temperature programming for the substrate. The Sb/In flux ratio was varied from higher than 1.0 (about 2.0 is optimum), to less than 1.0 (about 0.7 is optimum), to again much higher than 1.0 during the stages of evaporation. The electromagnetic characteristics were investigated and x-ray analysis of the films at various stages was undertaken. The films obtained contained no excess In and they were (111) highly oriented in x-ray analysis, showing high electron mobility. These films were used to prepare high performance Hall elements.
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