Abstract
The transparent thin-film transistors based on InSnZnO are investigated in this study. The Al2O3 and InSnZnO thin films deposited using mist chemical vapor deposition (mist CVD) are respectively used as the gate insulating and channel layers. The indium tin oxide (ITO) thin films deposited using the radio frequency (RF) sputtering method are served as the source/drain and gate electrodes. When the RF power of 45 W is used to deposit the ITO film, the lowest specific contact resistance of 9.7 × 10−3 Ω-cm2 and high optical transmittance of 72.4% are obtained. Furthermore, the thin-film transistor with ITO as the source/drain electrodes exhibits more stable electrical characteristics than the one with Al.
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