Investigation of charge-trap memories with AlN based band engineered storage layers

Abstract

This paper presents the investigation of the electrical properties of charge-trap memories with AlN based storage layers. The memory performance and reliability are studied in details and compared with the ones of a reference device using standard Si 3N 4 as storage layer. An engineered charge trapping layer is also proposed, made by an AlN/Si 3N 4 double layer, which shows reduced program/erase voltages, combined with 10 6 excellent endurance and good retention (Δ V T > 5 V after 10 years at 125 °C).