Abstract
The photocurrent-voltage characteristics and photoelectric sensitivity of a-Si:H samples with slit and comb electrodes are measured. A method for calculating the charge intensifying gain from the photoelectric sensitivity is proposed. The obtained charge intensifying gain of a-Si:H under an electric field of 105 V/cm through this method is as high as 4.3×103. The generation process of the charge intensification effect in a-Si:H is discussed on the basis of the energy level diagram. And the product of electron’s mobility and its lifetime is calculated from the measured values of the gains.
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