Abstract
An unified dual gate Zerbst-like technique has been developed to extract the generation lifetime in enhancement and accumulation mode fully depleted SOI MOSFET's. The technique is based on the analysis of the temporal variation of the quasi Fermi levels in the devices, following the application of a suitable voltage step on one of the gates. The analysis resulted in simple Zerbst-like expressions for the drain current transients. Numerical simulations, using PISCES, have been performed to validate the technique and its underlying analysis. The technique has been applied to both kinds of typical fully depleted SIMOX SOI MOSFET's and the measured generation lifetimes were in the range of 0.1 /spl mu/s to 1.0 /spl mu/s. >
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
