Abstract
The authors have introduced a technique to investigate the carrier dynamics of semiconductor nanostructures. Such a technique is based on the measurement of time-resolved differential photoluminescence spectra induced by subpicosecond pump and probe laser pulses by adjusting the temporal delay between them. Their results obtained on the InAs quantum dots embedded in InGaAs∕GaAs quantum wells using such a technique indicate that the exciton decay time, integrated photoluminescence intensity, and photoluminescence linewidth exhibit unique dependences on temperature.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
