Abstract
In this study, integrate and fire neuron by using a dual-gate (DG) PN-body tied (PNBT) silicon on insulator field-effect transistor (SOI-FET) was investigated. We found out that the DG PNBT SOI-FET has the integrate and fire function in a single device. The floating body and the positive feedback effect can perform the functions of the capacitor and comparator, respectively. The device can generate a continuous spike and also a single spike signal with the additional reset scheme. The reset action requires a recovery time, which can be controlled by voltage conditions. It has a chance of making a refractory period function. These characteristics mean that it is possible to realize the capacitor-less small footprint neuron circuit with the DG PNBT SOI-FET.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
