Abstract
This paper investigates the high-k spacer Junctionless Accumulation Mode (JLAM) Cylindrical Gate All Around (CGAA) MOSFET for improved electrical behavior and Analog/(RF) performance at 20 nm gate length. In the proposed device, the drive current (I ON ) enhances due to Source/Channel barrier reduction and leakage current (I OFF ) is reduced because of an effective increase in the physical channel length, due to fringing field effect caused by spacers. The impact of spacers on Analog/RF matrices such as I ON /I OFF ratio, transconductance (g m ), Tansconductance Generation Factor (g m /I DS ) TGF, intrinsic gain (g m /g d ) and Subthreshold Slope (SS) is investigated in detail. The improvement in I ON /I OFF and reduced SS make it relevant for low power digital application.
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