Abstract
The use of high band gap strained AlxGayIn1−x−yP as a Schottky layer of AlInAs/GaInAs high electron mobility transistors on InP has been investigated. A Schottky layer with a small AlP mole fraction (Al0.1Ga0.1In0.8P or Al0.2In 0.8P) significantly increases the Schottky barrier height, leading to significant reduction of gate leakage currents. Devices with an Al0.2In0.8P Schottky layer yield gate breakdown voltages as high as −15.5 V in addition to improving drain breakdown voltages (∼8 V). With devices having a gate length of 0.5 μm, we have achieved a maximum transconductance (gm) of 480 mS/mm, current gain cutoff frequency (fT) of 68 GHz, and power gain cutoff frequency (fmax) of 130 GHz.
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