Abstract
In order to realize in situ AlAs selective-area growth (SAG), we examined the effect of combinations of several source materials: dimethylaluminum-hydride (DMAH) and dimethylethylaminealane (DMEAA) as Al precursors, and As 4 and trisdimethylaminoarsine (TDMAAs) as arsenic source materials. That is, four combinations ((DMEAA, TDMAAs), (DMEAA, As 4), (DMAH, TDMAAs), (DMAH, As 4)) were investigated for AlAs growth by using a GaN mask. In the case of using DMEAA and As 4, and DMAH and TDMAAs, AlAs epitaxial layers with smooth surfaces were grown on the GaAs substrate. Moreover, it was confirmed that the combination of DMAH and TDMAAs is most effective for AlAs SAG without mask degradation.
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