Abstract
A prototype InGaP p+–i–n+ mesa photodiode was studied for its potential as the energy conversion device in a 63Ni betavoltaic cell; its electrical performance was analysed across the temperature range −20 °C to 100 °C. The results show that the InGaP detector when illuminated with a laboratory 63Ni radioisotope beta particle source had a maximum output power of 0.92 pW at −20 °C, this value decreased at higher temperatures. A decrease in the open circuit voltage and in the cell internal conversion efficiency were also observed when the temperature was increased: at −20 °C, the open circuit voltage and the cell internal conversion efficiency had values of 0.69 V and 4%, respectively. A short circuit current of 4.5 pA was measured at −20 °C.
Highlights
Betavoltaic microbatteries are promising systems for the provision of long-term energy (>10 years) supplies for low power consuming technologies such as implantable medical devices [1], FPGA encryption keys [2], and various security and defence technologies
Due to their low thermally generated leakage currents, wide bandgap materials can work at high temperatures without cooling systems, providing compact technologies that can be used in hot environments as well as cold environments
The results show the dependence on temper ature of the open circuit voltage, the short circuit current, the maximum output power, and the cell internal conversion efficiency
Summary
Betavoltaic microbatteries are promising systems for the provision of long-term energy (>10 years) supplies for low power consuming technologies such as implantable medical devices [1], FPGA encryption keys [2], and various security and defence technologies. Due to their low thermally generated leakage currents, wide bandgap materials can work at high temperatures without cooling systems, providing compact technologies that can be used in hot environments (e.g. hot deserts and industrial applications) as well as cold environments
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