Abstract
This research proposes a novel 4H-SiC power device structure—different concentration floating superjunction MOSFET (DC-FSJ MOSFET). Through simulation via Synopsys Technology Computer Aided Design (TCAD) software, compared with the structural and static characteristics of the traditional vertical MOSFET, DC-FSJ MOSFET has a higher breakdown voltage (BV) and lower forward specific on-resistance (Ron,sp). The DC-FSJ MOSFET is formed by multiple epitaxial technology to create a floating P-type structure in the epitaxial layer. Then, a current spreading layer (CSL) is added to reduce the Ron,sp. The floating P-type structure depth, epitaxial layer concentration and thickness are optimized in this research. This structure can not only achieve a breakdown voltage over 3300 V, but also reduce Ron,sp. Under the same conditions, the Baliga Figure of Merit (BFOM) of DC-FSJ MOSFET increases by 27% compared with the traditional vertical MOSFET. Ron,sp is 25% less than that of the traditional vertical MOSFET.
Highlights
As the material properties of silicon materials are restricted by higher breakdown voltage, operating temperature and switching frequency, a Si IGBT seems to be the better option for higher power systems
Is not as fast as that of a Si power MOSFET, so it is difficult for the silicon power devices to achieve higher power conversion efficiency
In terms of physical characteristics, silicon carbide materials have the advantages of a wider band gap, a higher breakdown electric field and higher thermal conductivity [1–5] compared with silicon materials
Summary
Publisher’s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affiliations. Most power devices are based on mature Si technology and applied to the high voltage areas. As the material properties of silicon materials are restricted by higher breakdown voltage, operating temperature and switching frequency, a Si IGBT seems to be the better option for higher power systems. The challenges in fabricating the superjunction MOSFET are the ability to precisely control the concentration and the uniform thickness of each epilayer. It will increase the difficulty of fabrication if more concentrations of the drift region are used.
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