Investigation Modulator on Slot Line with Surface Oriented p - i - n Structures

Abstract

In this work the results of investigation of the integral modulator on slot line with surface oriented p - i - n structures are given. Controlling devices in integral performance with the switch delay 1 - 2 micron are worked out mainly on microstrip transmission lines. Controlling devices with high operating speed are worked out on the surface - oriented p - i - n structures. Investigation of integrated surface oriented p-i-n structures showed good operating characteristics under the application of a powerful electromagnetic wave. All structures shown good operating characteristics at a high power level Ppulse 10 kW. The high-speed response for surface-devices is better than for bulk-diodes. The structure of GaAs has some advantages over the silicon in terms of the high speed response, but they work only at low microwave power levels.