Abstract
Two-dimensional (2D) nanomaterials have attracted great attention in next generation electronic and optoelectronic technologies due to the unique layered structure and excellent physical and chemical properties. However, the mechanism of transmission along the vertical direction of 2D semiconductor materials has not been investigated. Here, we use first-principles calculations to explore the bandgap energies along different directions, and fabricate a vertical, a lateral and a mixture-structured black phosphorus field effect transistor (BPFET) to study the electrical characteristics along different directions under variable temperatures. The variable temperature test indicates that the mixture-structured device performs more like a lateral device, while the conductance along the vertical direction is hard to be tuned by temperature and electrical field. The unchanged conductance under electric field and variable temperatures allows the vertical device to act as a fixed resistor, promising possible application for the prospective electronic and optoelectronic devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
