Investigating the Electrothermal Characteristics of Partially Depleted Submicron SOI CMOS Transistors in an Extended Temperature Range

Abstract

A technique for the investigation of the electrothermal characteristics of submicron partially depleted SOI CMOS transistors in the ambient temperature range of 25 to 225°С is discussed. It involves combining the experimental data and the results of numerical simulation. It is demonstrates that, when the ambient temperature is increased, with the preservation of the operating capacity of the transistors and the transistor inverter, the contribution of the self-heating mechanism consistently decreases. The proposed approach makes it possible to critically estimate the effect that self-heating has on the current–voltage characteristics of transistors in an extended temperature range.