Investigating the differences between Co adatoms states on surfaces of selected bismuth chalcogenides

Abstract

We report on the electronic and magnetic properties of Co atoms adsorbed on topological insulator (TI) surfaces, such as ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}, {\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$, and on magnetically doped ${\mathrm{Bi}}_{1.9}{\mathrm{Mn}}_{0.1}{\mathrm{Te}}_{3}$ and ${\mathrm{Bi}}_{1.98}{\mathrm{Fe}}_{0.02}{\mathrm{Se}}_{3}$ in comparison to a nontopological insulator surface, ${\mathrm{Bi}}_{2}{\mathrm{S}}_{3}$. Co atoms are used as probes of impurity affected surface electronic properties of TI and non-TI tetradymite semiconductors. X-ray spectroscopy, x-ray magnetic circular dichroism, and scanning tunneling microscopy and spectroscopy were employed. We found that the electronic properties of Co adatoms do not depend much on the substrate. In particular, no TI specific phenomenon was found. Magnetic dichroism measurements reveals an in-plane easy axis of adsorbed Co atoms on all topological insulators and ${\mathrm{Bi}}_{2}{\mathrm{S}}_{3}$, but not on the ferromagnetic substrate ${\mathrm{Bi}}_{1.9}{\mathrm{Mn}}_{0.1}{\mathrm{Te}}_{3}$, for which an out-of-plane easy axis was found.