Abstract
The N-polar orientation of GaN may be an option for the development of longer wavelength visible optoelectronics because of its higher indium uptake. N-polar InGaN LEDs with an inverted p-side down configuration and buried tunnel junctions were grown by metalorganic chemical vapor deposition. Fabricated devices in the wavelength range of 450–509 nm showed record high light output power for N-polar LEDs, up to 0.21 mW on-wafer at 20 A/cm2 with an emission wavelength of 470 nm. These results represent an improvement in performance of more than one order of magnitude over previously reported N-polar LEDs, demonstrating potential for the N-polar orientation in the nitride optoelectronics space.
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