Abstract
In this work, we present an inversion-mode In0.53Ga0.47As planar MOSFETs with current gain cutoff frequency (f T) = 275 GHz and maximum oscillation frequency (f max) = 75 GHz. To the best of our knowledge, this is the highest f T value among all the reported inversion-mode InGaAs MOSFETs. Meanwhile, peak transconductance (g m) shows 1035 (μS/μm). These extraordinary properties are attributed to the N2 remote plasma treatment which results in excellent high-k/III-V interface quality. With the assistance of delay-time analysis, effective electron velocity (V eff) of 2.88 × 107(cm s–1) is extracted for a possible explanation of the observed record f T performance.
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