Demonstration of Patterned GaN RF MIS-HEMTs Growing on Hybrid Oriented Silicon-on-Insulator (SOI) Substrates

Abstract

AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with Al2O3 gate insulator were demonstrated on hybrid oriented silicon-on-insulator (SOI) substrate. The current gain cut-off frequency (fT) of 49.4 GHz and maximum oscillation frequency (fmax) of 54.3 GHz was achieved with 0.3 µm gate length. Compared to high-resistivity Si (HR-Si) substrate, the current collapse effect can be reduced. The approach of co-integrated substrate using patterned structures with various dimensions leads to strain relaxation, which contributes to the reduction of current collapse.