Abstract
Inversion-mode GaAs wave-shaped metal-oxide-semiconductor field-effect transistors (WaveFETs) are demonstrated using atomic-layer epitaxy of La2O3 as gate dielectric on (111)A nano-facets formed on a GaAs (100) substrate. The wave-shaped nano-facets, which are desirable for the device on-state and off-state performance, are realized by lithographic patterning and anisotropic wet etching with optimized geometry. A well-behaved 1 μm gate length GaAs WaveFET shows a maximum drain current of 64 mA/mm, a subthreshold swing of 135 mV/dec, and an ION/IOFF ratio of greater than 107.
Highlights
Inversion-mode GaAs wave-shaped metal-oxide-semiconductor field-effect transistors (WaveFETs) are demonstrated using atomic-layer epitaxy of La2O3 as gate dielectric on (111)A nano-facets formed on a GaAs (100) substrate
We demonstrate GaAs wave-shaped metal-oxide-semiconductor field-effect transistors (MOSFETs) (WaveFETs) on a GaAs (100) substrate by nano-engineering to form ALE La2O3 on (111)A nano-facets
The epitaxial La2O3 thin films employed here were deposited from the precursors lanthanum tris(N,N’-diisopropylformamidinate) and H2O at 385 °C, while the amorphous Al2O3 oxide capping layer was deposited with precursors of trimethylalumnum (TMA) and H2O at 300 °C
Summary
1) School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, U.S.A. 2) Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, U.S.A. 3) Department of Physics, Purdue University, West Lafayette, IN 47907, U.S.A. 4) School of Materials Engineering, Purdue University, West Lafayette, IN 47907, U.S.A. Inversion-mode GaAs wave-shaped metal-oxide-semiconductor field-effect transistors (WaveFETs) are demonstrated using atomic-layer epitaxy of La2O3 as gate dielectric on (111)A nano-facets formed on a GaAs (100) substrate. The wave-shaped nano-facets, which are desirable for the device on-state and off-state performance, are realized by lithographic patterning and anisotropic wet etching with optimized geometry.
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