Inversion-channel enhancement-mode GaAs MOSFETs with regrown source and drain contacts

Abstract

The use of compound semiconductors as the channel material has recently drawn great attention because of its potential to solve the upcoming Si metal–oxide–semiconductor field effect transistor (MOSFET) scaling problem for device beyond 22 nm node. In this work, a method of fabricating inversion-channel enhancement-mode GaAs n-MOSFET by incorporating molecular beam epitaxy regrown source and drain regions is demonstrated. By using regrown contact layers to avoid high-temperature processes and, thus, preserve the integrity of the oxide–semiconductor interface, the structure allows the fabrication of self-aligned III–V-based MOSFET. The fabricated n-channel enhancement-mode GaAs MOSFET with a 4 μm gate length shows a record high transconductance of 75 mS/mm.