Abstract
The inverse spin Hall effect (ISHE) is a phenomenon due to spin-orbit coupling, in which a longitudinal spin current can generate a transverse charge current and electrical voltage difference. We investigate the ISHE in a topological insulator material, a HgTe quantum well, assuming that the Fermi energy is in the conduction band. The transverse charge current and voltage difference are calculated in the ballistic regime. It is found that in this system a Rashba spin-orbit coupling can cause the occurrence of the ISHE. The induced transverse voltage difference is maximized when the spin current is polarized in the longitudinal direction, and vanishes when the spin current is polarized in the transverse directions.
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