Abstract
We have investigated the electronic properties of the empty states of epitaxial layers of CaF 2 on Si(111) substrate, for film thicknesses of a few monolayers. The changes induced in the inverse photoemission spectrum by the electron beam irradiation were measured at a fixed angle, and are discussed in terms of fluorine desorption. After stabilisation of the surface, k-resolved inverse photoemission spectroscopy (KRIPES) was performed and the dispersion of the four lowest empty states was measured. The lowest band has a metallic character and is attributed to a Ca + plane at the surface. Other features are tentatively assigned to interface states.
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