Intrinsically stretchable phototransistors with polymer-QD-polymer multi-layered hybrid films for visible-NIR perspective electronic skin sensors

Abstract

Stretchable phototransistors represent a crucial component in the development of skin-inspired optoelectronics. Although there have been significant advancements in the development of skin-like photosensitive semiconductors, technology for stretchable phototransistors that can detect a broad spectrum of wavelengths from near-infrared (NIR) to visible light is still in its early stages. This study introduces an intrinsically stretchable phototransistor employing hybrid semiconductor films consisting of polymer semiconductors (PSC) and quantum dots (QDs). The hybrid multi-layered semiconductor film (PSC/QDs/PSC) possesses wide-ranging color sensitivity from NIR to visible light, along with high photosensitivity and photoresponsivity. Furthermore, our phototransistor exhibits remarkable strain-insensitive, photo-response characteristics, maintaining performance even under 50% strain and enduring 10,000 strain cycles. Notably, the phototransistor array, featuring a distinctive dodecagon shape of source/drain electrodes, effectively responds to NIR and visible light stimuli, even when subjected to substantial areal strains of up to 38%.