Abstract
ABSTRACT Imaging in visible light at room temperature is now a well-mastered technology, whereas im aging in the near infrared (NIR) remains a challenge. NIR imaging has many applications like sensing, night vision and biological diagnostics. Unfortunately, silicon detectors are inefficient above 1000 nm, and other IR technologies still need low working temperatures and are thus expensive. Colloidal quantum dots can overcome these limitations thanks to their absorption wavelength tunability depending on their chemical composition a nd size. After a brief review of this research field, we will present the preparation of hybrid photodetectors using NIR absorbing PbS quantum dots in combination with poly(3-hexylthiopene) and PCBM. We discuss different solutio n based deposition processes for device fabrication (spin-coating, dip-coating, doctor blading, inkjet printing). Preliminary device tests result in a detectivity of 4.7.10 9 Jones at 1300 nm. Keywords: Quantum dots, photodetector, NIR, wet process, inkjet printing.
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