Abstract
Intrinsic capacitance coefficients are derived for metal oxide semiconductor field effect (MOSFET) based on the inversion charge relation. A simple expression is obtained for the channel charge as a function of distance. Integrals for the proportionately partitioned source and drain-stored charges are obtained analytically. The resulting expressions are valid from deep subthreshold to strong inversion. A saturation charge q/sub mda/ is introduced that allows handling of short-channel effects. The capacitance coefficients have the required source/drain symmetry.
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