Abstract
Graphene interfaced with a semiconductor forms a Schottky junction with rectifying properties. The inherent spatial inhomogeneity due to the formation of ripples and ridges in graphene can lead to fluctuations in the Schottky barrier height (SBH). The non-ideal behavior of the temperature dependent barrier height and ideality factor greater than 4 can be attributed to these spatial inhomogeneities. Assuming a Gaussian distribution of the barrier, mean SBHs of 1.30 ± 0.18 eV and 1.16 ± 0.16 eV are found for graphene/SiC junctions on the C- and Si-face, respectively. These findings reveal intrinsic spatial inhomogeneities in the SBHs in graphene based Schottky junctions.
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