Abstract
Electron mobility in ${\mathrm{Ga}}_{0.47}$${\mathrm{In}}_{0.53}$As quantum wells is calculated for well widths between 2 and 10 nm and for the temperatures of 4.2, 77, and 300 K. Effects of the finite barrier height, energy-band nonparabolicity, mode confinement, electron screening, and degeneracy have been taken into account. The calculated values are found to be close to the experimental results for a well width of 10 nm. Effects of the composition of the barrier layer are also discussed.
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