Abstract
For the optimization of parameters of intrinsic oxide–p-InSe solar cells (SC), the influence of long-term (for 24–120h) thermal oxidation of crystal substrates in open air was investigated. We have found an essential improvement of photoelectric parameters, and the greatest values of open-circuit voltage and short-circuit current of SC were obtained for the p-InSe substrates oxidized at 450°C for 96h. It is established that the changes in the photosensitivity spectra are caused by formation of additional oxide phases. The electrical characteristics of such SC are affected by a series resistance, which appears at formation of the charge-collecting contacts on p-InSe substrates. This resistance effects simultaneously on the SC load characteristics.
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