Abstract
This work, presents the intense light effect on electrical parameters of silicon solar such as short circuit current, open circuit voltage, series and shunt resistances, maximum power, conversion efficiency, fill factor. After the resolution of the continuity equation which leads to the solar cell photocurrent and photovoltage expressions, we use the J/V characteristic to determine the solar cell series and shunt resistances. The maximum electric power of the solar cell is determined using the curves of electric power versus junction dynamic velocity, and then, the fill factor and conversion efficiency are calculated. Light concentration and junction dynamic velocity effects on solar cell short circuit current, open circuit voltage, series and shunt resistances, electric power, fill factor and conversion efficiency are also studied. The study proved that with increase of illumination light intensity, the solar cell shunt resistances decreases whereas series resistance, short circuit current, open circuit voltage, electric power, fill factor and conversion efficiency increases. MARTIAL ZOUNGRANA, ISSA ZERBO, MAHAMADI SAVADOGO, SANNA TIEDREBEOGO, BOUBACAR SORO AND DIEUDONNE JOSEPH BATHIEBO
Highlights
Illumination level is one of the main factors which characterizes the electric power and conversion efficiency of a silicon solar cell
In this work we studied the effect of intense light illumination level on short circuit current, open circuit voltage, series and shunt resistances, electric power, fill factor and conversion efficiency
This work put in evidence that, with the increase of intense light intensity, the quantity of carriers photogenerated in the base of the solar cell and which cross the junction increases
Summary
Illumination level is one of the main factors which characterizes the electric power and conversion efficiency of a silicon solar cell. Since solar cell electrical parameters such as short circuit current, open circuit voltage, electric power, conversion efficiency and fill factor are directly link to charge carriers distribution in the base, the illumination level, which is a source of carrier photogeneration, Martial Zoungrana, Laboratory of Thermal and Renewable Energies, Department of Physics, Unit of Training and Research in Pure and Applied Sciences, University of Ouagadougou Professeur Joseph KI-ZERBO, Burkina Faso. Boubacar Soro, Laboratory of Thermal and Renewable Energies, Department of Physics, Unit of Training and Research in Pure and Applied Sciences, University of Ouagadougou Professeur Joseph KI-ZERBO, Burkina Faso. In this work we studied the effect of intense light illumination level on short circuit current, open circuit voltage, series and shunt resistances, electric power, fill factor and conversion efficiency
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