Abstract
The main intrinsic parameters in silicon carbide material are not exhaustively studied up to now. An experimental study of the behaviour of electrical parameters of Schottky barrier diodes (SBD) fabricated on the Si face of 4H-SiC epitaxial layers with respect to temperature is shown. Analysed devices present an electrical behaviour in accordance to thermoionic emission and a good metal–semiconductor interface uniformly confirmed by capacitance/voltage measurements ( C– V). Current/voltage measurements ( I– V) have been performed in a large temperature range and lead to an evaluation of the Richardson constant.
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