Abstract
Parameters of Schottky barrier diodes (SBD), such as the ideality factor (n), series resistance (R s ) and the effective barrier height (ϕ Bn ), were obtained from I-V and C-V measurements of Al/Si/GaAs and Al/GaAs heterostructures at room temperature. For SBD with a Si interlayer grown by molecule beam epitaxy the following parameters were found: n = 1.29, ϕI-V = 0.74eV and R s = 120Ω as compared to the sample without interlayer (1.7–7.5, 0.8eV and 500Ω, respectively). The electronic properties of Si/GaAs(001) interface were determined from C-V and G-V measurements of Al/SiO 2 /GaAs (001) MIS structure. It is shown that formation of Si/GaAs(001) interface allows reducing the density of surface states to ∼(1–5)·1011 cm−2 eV−1 for Au/SiO 2 /GaAs (001) MIS structure.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
