Abstract
The scheme of a semiconductor quantum-well laser is proposed for the simultaneous generation of TE0 and TM0 modes with different frequencies in the near-IR region. The possibility of efficient terahertz difference-frequency generation by this laser is considered. It is shown that for the 100-μm-wide active region of the laser and for the 1-W near-IR modes, the laser power at the difference frequency in the 1–8-THz region can achieve ∼1 μmW at room temperature.
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