Intersystem Crossing Rate in Thermally Activated Delayed Fluorescence Emitters

Abstract

For a better understanding of the exciton decay process in thermally activated delayed fluorescence (TADF) emitters, the intersystem crossing rate, kISC, is one of the important physical constants that have to be determined. Herein, a method to calculate the kISC value from photoluminescence (PL) measurements is reconsidered. The kISC value can be determined at very low temperatures where delayed fluorescence (DF) is completely suppressed, as well as around room temperature where triplet excitons mainly decay into the ground state by emitting DF. However, there is a temperature range where the kISC value cannot be determined accurately because the influences of nonradiative decay paths can be neither ignored nor corrected. For such a temperature range, an alternative approach, which utilizes the temperature dependence of an observed PL decay rate, is presented. In this way, kISC values from 300 to 10 K are determined for thin films of two TADF emitters, i.e., 1,2,3,5‐tetrakis(carbazol‐9‐yl)‐4,6‐dicyanobenzene and 1,2‐bis(carbazol‐9‐yl)‐4,5‐dicyanobenzene, which are known as 4CzIPN and 2CzPN, respectively.