Intersubband optical transition matrix elements for hole states in semiconductor quantum wells

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Intersubband optical transition matrix elements between quantized hole states in semiconductor quantum wells, calculated from the 4*4 Hamiltonian, are derived, taking into account the position dependence of Luttinger gamma parameters. Furthermore, the transition matrix elements between states obtained within the axial approximation, from the 2*2 Hamiltonian, are also derived. Numerical calculations indicate the importance of taking the position dependence of Luttinger parameters into account for bound-free transitions.