Abstract
In this paper we present experimental and theoretical study of intersubband transitions at telecommunication wavelengths in GaN/AlN quantum wells grown by molecular beam epitaxy on sapphire substrates. Crossed Rutherford back-scattering and photoluminescence experiments show that strong in-plane carrier localization occurs due to thickness fluctuations at GaN/AlN interfaces. Fourier transform infrared spectroscopy and photo-induced absorption spectroscopy performed on doped and undoped samples reveal a systematic blue-shift of the e1–e2 transition due to many body interactions. A good agreement is achieved between experiment and self-consistent Schrodinger–Poisson calculations. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
