Intersubband absorptions at telecommunication wavelengths in GaN/AlN doped quantum wells: influence of many-body effects

Abstract

This work presents the theoretical and experimental results on intersubband spectroscopy in nonintentionally doped samples and silicon-doped GaN/AIN quantum wells grown on sapphire substrate. The observed blue-shift of the intersubband (ISB) transition energy with doping is explained as a many-body effects dominated by the exchange interaction component. GaN/AIN heterostructures exhibit a large band-offset in the conduction band. This characteristic makes the development of unipolar optoelectronic devices operating at fibre-optic telecommunication wavelengths. Also, because of the enhanced electron LO-phonon interaction in these structures the absorption recovery time is found to be 150-300 fs, offering prospects for the development of ultrafast devices.