Abstract
The intersubband absorption of electrons in symmetrically strained Si/Si 1-xGex multiple quantum wells are studied for various modulation doped samples with different well widths and electron concentrations. Narrow absorption lines have been measured in waveguide geometry at 8K. The measured absorptionenergies are attributed to the 0→1 and 1→2 intersubband transitions, respectively. They are in reasonable agreement with self-consistent calculations.
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