Abstract
We report observations of strong room temperature intersubband absorption in strain-compensated In0.84Ga0.16As/AlAs/In0.52Al0.48As double-barrier quantum wells grown on InP substrates. Multiple Γ → Γ intersubband transitions have been observed across a wide range of the mid infrared spectrum (2–7 µm) in three structures of differing InGaAs well width (30 Å, 45 Å and 80 Å) and therefore with differing net strain. This absorption range is not covered by direct-gap GaAs/AlGaAs structures.
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