Abstract

The estimations of equivalent values for linear energy transfer of heavy charged particles based on the results of experimental investigations of sensitivity of LSICs to local radiation effects with the use of the procedure of local laser irradiation are presented. The possibility of recalculation of the energy of laser radiation into equivalent values of linear energy transfer with the use of the measurements of the ionization reaction in the supply circuit of LSIC is substantiated. Uncertainties caused by the characteristics of the interaction of optical radiation with semiconductor structures are eliminated in the suggested procedure.

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