Abstract
Current versus voltage characteristics in an illuminated a-Si:H solar cell which shows conversion efficiency of 4.3% (cell area: 1.0 cm2) are interpreted by assuming a simplified junction model and a distribution of the density of states in the band gap. Since the width of the depletion region relates to this distribution, a depletion width (W) versus bias voltage (V) relation can be calculated from this distribution. Also, another W-V relation is obtained from light-generated current data on the basis of a few assumptions. These two different estimations of the W-V relation excellently agree when one assumes a hyperbolic distribution of the density of states in the band gap which is symmetric with respect to the middle of the energy band gap and has a density of mid-gap states of 8.3×1015 (cm3 eV)-1. This value is comparable to the minimum density of states in the a-Si:F:H reported by W. Czubatyj et al.
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