Abstract
We investigate the impact on statistical variability induced by random dopant fluctuations (RDF) and gate line edge roughness (LER) acting separately and simultaneously in negative capacitance (NC) FETs. In order to simulate the NCFETs, we couple the 3D transistor simulator tool GARAND which is well suited for statistical variability simulations, with the Landau Khalatnikov (L-K) model of the ferroelectric. We also explore the impact of ferroelectric thickness scaling.
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