Abstract
ABSTRACTKondo semiconductors based on rare-earth elements possess a narrow gap in the renormalised density of states near the Fermi level. Their ground states remain nonmagnetic due to strong hybridisation of the 4f state with conduction bands. However, in the orthorhombic compounds CeT2Al10 (T = Ru, Os), opening of a hybridisation gap is followed by an antiferromagnetic (AFM) order at a rather high temperature TN ≅ 28 K. Our systematic studies of the effects of electron/hole doping on the magnetic and transport properties, electron tunnelling, and spin-gap formation revealed that the hybridisation gap is indispensable for the unusual AFM order. Under uniaxial pressure, TN increases linearly as the orthorhombic b-axis parameter is decreased. Our findings support the model that a kind of charge-density wave developing along the b axis in the presence of the hybridisation gap induces the AFM order in these systems.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
