Abstract
Nano-agglomerates of In(Sb,As) in InAs, (In,Ga)Sb in GaSb, and (Cd,Zn,Mn)Se in (Zn,Mn)Se are classified by transmission electron microscopy. In scanning transmission electron microscopy, atomic resolution Z-contrast images reveal different modes of internal compositional modulation on the atomic length scale, resulting for all three material systems in nano-agglomerates of an appropriate size that may constitute a new type of quantum dot. For other nano-agglomerates of In(Sb,As) in InAs and (In,Ga)Sb in GaSb, we observed a second type of nanoscale ordering that results in nano-agglomerates with an internal compositional modulation on a length scale of a few nm. Both types of compositional modulation are discussed as having arisen from a rather long-term structural response to a combination of internal and external strains.
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