Abstract
The electroluminescence (EL) output power of c‐plane InGaN/GaN‐based light‐emitting diodes (LEDs) is much higher than that of semipolar and LEDs at the same operation current. In order to elucidate the reasons for this behavior, we have fitted the pulsed EL data by the well‐known ABC model to extract the internal quantum efficiency (IQE) and the carrier injection efficiency (CIE) to clarify which parameter weighs more for the poor EL output power of the semipolar LEDs. The CIE shows large differences, 78%, 4%, and 4% for the c‐plane, and LEDs, respectively, whereas the IQE values are fairly the same for all three structures. The fit of resonant photoluminescence (PL) data at room temperature confirms the similar IQE values for all three structures. The CIE was increased from 4% to 10% for the planar LED with better electrical conductivity of the p‐GaN layer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
