Abstract
We have used photoluminescence spectroscopy to measure the relative intensity of the ZnSe and GaAs near band edge (NBE) emissions at ZnSe/GaAs interfaces fabricated by molecular beam epitaxy under different growth conditions. Using a HeCd laser to excite free electron-hole pairs near the buried heterointerface, we found systematic variations in the NBE relative intensity as a function of the Zn to Se beam pressure ratio used to grow the ZnSe epilayers. The results are in good agreement with the predictions of a simple expression for free carrier injection across the interface due to internal photoemission. In such a process, laser excitation results in free carriers which can move from GaAs to ZnSe over barriers due to the heterojunction band offsets and recombine across the band gap or via deep levels. The variation of such internal photoemission with different growth conditions supports the previously reported dependence of the ZnSe/GaAs band offset on the local interface composition.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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