Abstract
The internal friction spectra of an amorphous thin-film bismuth ferrite deposited on a silicon substrate were studied. The temperature dependence of mechanical losses near the glass transition temperature revealed a wide maximum of internal friction associated with α-relaxation of the amorphous structure. In this temperature region, two linear sections in the ln Q −1 vs (1/ T ) dependence are observed with an intersection point at the glass transition temperature. According to the results of low- and high-temperature internal friction investigation of the amorphous bismuth ferrite in the α-relaxation region, the values of the migration energy and the formation energy of vacancies-like defects were estimated, which are equal to E m = 0.80 ± 0.08 eV and E v = 0.88 ± 0.08 eV, respectively. • Internal friction Q −1 in amorphous bismuth ferrite BiFeO 3 at high temperatures was studied. • The Q −1 maximum is due to α-relaxation of the amorphous structure in thin-film BiFeO 3 . • Crystallization of the amorphous structure of BiFeO 3 is confirmed by the results of DTA and X-ray diffraction analysis. • Estimates of the migration energy and the formation energy of oxygen vacancies in the amorphous BiFeO 3 were made.
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