Abstract
Formation and transfer of oxygen vacancies are essential to transitional metal oxide RRAM’s switching behavior. In this paper, first principle is used to simulate the formation energy of oxygen vacancies in undoped, Al-doped and N-doped TaOx based RRAM. In Al-doped TaOx, oxygen vacancies’ formation energy is reduced significantly near the dopant atom. However, in N-doped TaOx, the formation energy of oxygen vacancies is slightly decreased compared with the undoped one. Our simulation results provide insight and guidance on the approach to improving RRAM’s performance by doping atoms.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have