Abstract
We report on the experimental determination of composition profiles of strainedthree-dimensional (3D) SiGe islands on Si(001) substrates by means of acombination of selective wet chemical etching and atomic force microscopy (AFM).Isocompositional profiles at 65% Ge content were obtained by etching samples in aH2O2 solution.Quantitative 3D composition profiles of individual islands were extracted by using selective etchingin a NH4OH:H2O2 solution and an AFM-based nanotomography approach. This technique allows us to obtainat the same time 3D profiles for coherent and dislocated islands and to collect data withlarge statistics. Lateral and vertical composition gradients are observed and their origin isdiscussed.
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